PI Name & Affiliation:

Dr.Vasu Kuraganti,
Assistant Professor,
Department of Physics,
School of Advanced Sciences (SAS),
Vellore Institute of Technology, India

Funding Agency: DST-SERB

Scheme: Empowerment and Equity Opportunities for Excellence in Science

Overlay: Rs. 44, 03,220

Duration of the Project: 3 Years

Dr.Vasu Kuraganti

Assistant Professor


Scheme: 2D materials based multi-junction Photovoltaic cell

Project Description

The solar cell industry mainly relies on the 1st generation Si wafer-based technology and occupies a 70% share in the solar cell market. There has been great attention paid in recent years on emerging 3rd generation solar cells made with nanostructured semiconductor materials, which are alternative to the wafer and thin-films based solar cell technology. Therefore, design and development of high efficiency, low cost and feasible novel nanostructured materials based solar cells are promising for future energy demand. Nanostructured two-dimensional layered transition metal dichalcogenides (TMDCs) semiconductors MX2 (M=Mo, W, Te and X=S, Se) are emerging as potential candidates for energy generation, storage and conversion applications. Photovoltaic response from p-n and Schottky junction 2D heterostructure solar cell are reported in recent years. The aim of the present proposal is extending the photovoltaic energy conversion potentials of degenerate doped TMDCs semiconductor heterostructures prepared by state-of-the-art chemical vapor deposition technique.