PI Name & Affiliation:

Dr.Vasu Kuraganti,
Assistant Professor,
Department of Physics,
School of Advanced Sciences (SAS),
Vellore Institute of Technology, India

Funding Agency: MHRD

Scheme: Scheme for Transformational and Advanced Research in Sciences

Overlay: Rs. 49, 88, 000

Duration of the Project: 3 Years

Dr.Vasu Kuraganti

Assistant Professor


Figure 1 : Bandstructure of degenerates
(a) N-type and (b) P-type semiconductor


Figure 2 : Data of magnetic and electrochemical
Hydrogen generation of Mn-Doped MoSe2

Project Description

Degenerate semiconductors are referred as the special class of materials with novel electronic structure originates from the heavily doped charge carriers forms energy bands with in the conduction band or valance band. As a result the Fermi level shift and lies within the conduction band (n-type) or valance band (p-type). Layered transition metal dichalcogenides (TMDs) compounds MX2 (M=Mo, W, Te and X=S, Se) are emerged as potential candidates for electronic and energy applications. The current research strategy rely on the improving the functional properties of 2D layered materials by transition metal doping. In view of expending potentials of 2D materials for multifunctional purpose, the present proposal is developed to explore of the 2D layered materials use in electronic, optoelectronic, spintronic and energy related applications by degenerate doping